PART |
Description |
Maker |
2SB1709 |
Genera purpose amplification(−12V −1.5A) Genera purpose amplification(-12V, -1.5A)
|
ROHM[Rohm]
|
CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE. TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五(巴西)总裁| 5A条一(c)|26 1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc. Continental Device India Limited
|
CFD2375P CFD2375Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 800 - 1500 hFE. 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1000 hFE. 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1500 hFE.
|
Continental Device India Limited
|
BDW83B BDW83A |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
2N6040 2N6041 2N6042 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
2N6649 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
2N6034 2N6035 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
CSC1398 CSC1398Q CSC1398R |
15.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 2.000A Ic, 30 hFE. Complementary CSA748 15.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 2.000A Ic, 30 hFE. Complementary CSA748Q 15.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 2.000A Ic, 30 hFE. Complementary CSA748R
|
Continental Device India Limited
|
2N5880 2N5881 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
2N5492 2N5494 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
2N6247 2N4398 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|